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Associate Professor


Associate Professor





◆ 2007年至2011年,香港城市大学物理及材料科学系,教学导师;

◆ 2004年至2006年,香港城市大学COSDAF研究中心;

◆ 1999年至2003年,香港大学物理系,研究员。

◆ 1989年至1991年,华侨大学物理系,讲师。

◆ 1996年至1997年,美国Washington State University,访问学者;

◆ 1994年至1996年,美国Brookhaven国家实验室,访问学者。



◆ 2003年,获得香港大学半导体专业博士学位;

◆ 1988年,获得南京大学固体物理专业硕士学位;

◆ 1985年,获得南京大学物理专业学士学位。



1. Y.Y.Shan, H.L.Au, B.K.Panda, S.Fung, C.D.Beling, Y.Y.Wang, and H.M.Weng, “Semi-insulating GaAs: A possible substrate for a field-assisted positron moderator” Appl. Phys. A 59, 259-273(1994).

2. Y.Y.Shan, B.K.Panda, S.Fung, and C.D.Beling, “Au/GaAs interface annealing study by positron-lifetime spectroscopy”, Phys. Rev. B 52, 4724-4727(1995).

3. B.K.Panda, Y.Y.Shan, S.Fung, and C.D.Beling, “Positron effective mass in silicon” , Phys. Rev. B 52, 5690-5694(1995).

4. Y.Y.Shan, C.C.Ling, H.L.Au, S.Fung, C.D.Beling, and Y.Y. Wang, “Positron Mobility and interface defect studies in semi-insulating GaAs using the lifetime technique”, Materials Science Form, Vols. 175, p.517-521(1995).

5. C.C.Ling, Y.Y.Shan, B.K.Panda, S.Fleischer, C.D.Beling, and S.Fung, “Doppler-broadening measurements of microvoids at the Au/GaAs interface”, Appl. Phys. A 60, 545-549(1995).

6. Y.Y.Shan, P. Asoka-Kumar, K.G.Lynn, S.Fung, and C.D.Beling, “Field effect on positron diffusion in semi-insulating GaAs”, Phys. Rev. B 54, 1982-1986(1996).

7. Cs. Szeles, Y.Y.Shan, K.G.Lynn, and E.E.Eissler, “Deep Electronic Levels in High-Pressure Bridgman Cd1-xZnxTe”, Nucl. Instr. and Meth., A 308, 148-152(1996).

8. Y.Y.Shan, K.G.Lynn, Cs.Szeles, P.Asoka-Kumar, T. Thio, J. W. Bennett, S.Fung, and C.D.Beling, “Metastability and microscopic structure of DX center in Cd0.8Zn0.2Te:Cl”, Materials Science Forum Vols. 255, p.506-508(1997).

9. Cs. Szeles, Y. Y. Shan, K. G. Lynn, and A. R. Mooderbaugh ,“Trapping properties of cadmium vacancies in Cd1-xZnxTe”, Phys. Rev. B 55, 6945-6949(1997).

10. Y.Y.Shan, C.C.Ling, A.H.Deng, B.K.Panda, C.D.Beling, and S.Fung, “EL2 deep level transient study in semi-insulating GaAs using positron lifetime spectroscopy”, Phys. Rev. B 55, 7624-7628(1997).

11. Y.Y.Shan, P. Asoka-Kumar, K.G.Lynn, S. Fung, and C.D.Beling, “Low-temperature positron transport in semi-insulating GaAs”, Phys. Rev. B 55, 9897-9903(1997).

12. Y.Y.Shan, Cs.Szeles, K.G. Lynn, T. Thio, P.Becla, and E.E.Eissler , “Study of DX centers in Cd0.8 Zn0.2Te:Cl by thermoelectric effect spectroscopy and positron annihilation spectroscopy”, Bull. Am. Phys. Soc. Vol. 41, No.1, 153(1996).

13. Y. Y. Shan, K. G. Lynn, Cs. Szeles, T. Thio, S. Fung, C. D. Beling, “The Microscopic Structure of DX Center in CdZnTe”, Materials Science Forum Vols. 255-257(1997) p.506-508

14. Y.Y.Shan, K.G.Lynn, Cs.Szeles, P.Asoka-Kumar, T. Thio, J. W. Bennett, S.Fung, and C.D.Beling, “Microscopic Structure of DX centers in Cd0.8Zn0.2Te:Cl”, Phys. Rev. Lett. 79, 4473-4476(1997).

15. Y.Y.Shan, A.H.Deng, C.C. Ling, C. D. Beling, S. Fung, and K. G. Lynn, “Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation”, J. Appl. Phys. 84(4), 1889-1992(1998).

16. C. D. Beling, A.H.Deng, Y. Y. Shan, Y. W. Zhao, and S. Fung, “Positron lifetime study of compensation defects in undoped semi-insulating InP”, Phys. Rev. B 58, 13648-13656(1998)

17. C. D.Beling, W. Liming, Y.Y. Shan, S.H.Cheung, and S. Fung, “On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy”, Journal of Physics: Condensed Matter 10, 10475(1998)

18. H. Deng, Y. Y. Shan, M. Gong, C. C. Ling, S. Fung, and C. D. Beling, “Low temperature positron trapping in as-grown and electron-irradiated n-type 6H-SiC”, Materials Science Forum, 2000

19. Y. F. Hu, Y. Y. Shan, C. D. Beling, S. Fung, M. H. Xie, S. H. Cheung, J. Tu, G. Brauer, W. Anward and D. S. Y. Tong, “GaN thin films on SiC substrates studied using variable energy positron annihilation spectroscopy”, Materials Science Forum 2000

20. C.C.Ling, S.Fung, C.D.Beling, Y. Y. Shan, and A. H. Deng, “A Study of the electric field transient at the Au/GaAs contact under an alternating current square-pulse bias”, Journal of Physics: Condensed Matter  14, 13705(2002)

21. A, H. Deng, Y. Y. Shan, S. Fung, and C. D. Beling, “Application of positron annihilation lifetime technique to the study of deep level transients in semi-conductors” , J. Appl. Phys., 91, 3931 (2002).

22. Y. Y. Shan, A. H. Deng, Y. W. Zhao, C. C. Ling, S. Fung, C. D. Beling, N. T. Sun “Positron-annililation study of compensation defects in LEC-grown InP”, J. Appl. Phys,91, 1898(2002).

23. Y. K. Liu, J. A. Zapien, C. Y. Geng, Y. Y. Shan, C. S. Lee, Y. Lifshitz and S. T. Lee, “High-quality CdS nanoribbons with lasing cavity”, Appl. Phys. Letts. 85, 3241-3243 (2004).

24. Y. K. Liu, J. A. Zapien, Y. Y. Shan, C. Y. Geng, C. S. Lee and S. T. Lee, “Wavelength-control lasing in ZnxCd1-xS single-crystal nanoribbons”, Adv. Mater. 17, 1372-1377 (2005).

25. M. W. Shao, Y. Y. Shan, N. B. Wong and S. T. Lee, “Silicon nanowire sensors for bioanalystical applications: glucose and hydrogen peroxide detection”, Adv. Funct. Mater. 15, 1478-1482 (2005).

26. M. W. Shao, H. Yao, M. L. Zhang, N. B. Wong, Y. Y. Shan and S. T. Lee, “Fabrication and application of long strands of silicon nanowires as sensors for bovine serum albumin detection”, Appl. Phys. Letts. 87, 183106 (2005).

27. X. T. Zhou, T. K. Sham, Y. Y. Shan, X. F. Duan, S. T. Lee and R. A. Rosenberg, “One-dimensional zigzag gallium nitride nanostructures”, J. Appl. Phys. 97, 104315 (2005).

28.Q. Li, J. A. Zapien,Y. Y. Shan, Y. K. Liu and S. T. Lee, “Manganese doping and optical properties of ZnS nanoribbons by postannealing”, Appl. Phys. Letts. 88, 1-3 (2006).


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  • 电话+86-(0)755-88018200
  • 传真+86-(0)755-88018204
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